to-92 plastic-encapsulate transistors KTC3203 transistor (npn) features z complementary to kta1271 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 800 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma, i b =0 35 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 0.1ma, i c =0 5 v collector cut-off current i cbo v cb = 35v , i e =0 0.1 a collector cut-off current i ceo v ce = 25v , i b =0 0.2 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 100 320 dc current gain h fe(2) v ce =1v, i c = 700ma 35 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 20ma 0.5 v base-emitter voltage v be v ce = 1v, i c = 10ma 0.8 v transition frequency f t v ce = 5 v, i c = 10ma 120 mhz collector output capacitance c ob v cb =10v,i e = 0,f=1mhz 13 pf classification of h fe(1) rank o y range 100-200 160-320 to-92 1. emitter 2. collector 3. base tiger electronic co.,ltd a,june,2011
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